Search methods for inorganic materials crystal structure prediction.

Time-resolved photoluminescence studies of single interface wurtzite/zincblende heterostructured InP nanowires. Dick, Anders Gustafsson, Mats-Erik Pistol.

Asmita Jash, Aymen Yangui, Sebastian Lehmann, Ivan G.

Exploring the Size Limitations of Wurtzite III–V Film Growth. The Journal of Physical Chemistry C 2020, 124 Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors.

Giacomo Giorgi, Michele Amato, Stefano Ossicini, Xavier Cartoixà, Enric Canadell, Riccardo Rurali.

This article is cited by 11 publications. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires. Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory.

We find wurtzite nanowires to grow along and zinc blende counterparts along.

Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP -oriented substrate. However, the fundamental understanding of the nature of polytypism in III–V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments.

The opportunity to engineer III–V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication.

Blende